Abstract
We have investigated the dependence of lifetime distribution of photoluminescence (PL) in a-Si:H films on the defect density. In order to analyse the lifetime distribution quantitatively, we estimated characteristic lifetime from the in-phase signal obtained by frequency resolved spectroscopy (FRS). The increase of lifetime of PL due to contribution of emission from triplet excitons trapped at defects is seen at 0.95–1.13 eV. The characteristic lifetime of emission from electron-hole pairs is discussed by considering the probability of tunnelling to non-radiative recombination centres and radii of wave functions of gap states and tail states.
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