Abstract
A new recombination channel for the electron-hole plasma in silicon, at carrier densities of ${n}_{e}\ensuremath{\gtrsim}{10}^{21}$ ${\mathrm{cm}}^{\ensuremath{-}3}$, is calculated. It is shown to be important in explaining the optical response of the electron-hole plasma at different probing wavelengths generated by picosecond pulses at very large fluences sufficient to melt the sample.
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