Lifetime modeling of intrinsic gate oxide breakdown at high temperature

Abstract

High resolution time-dependent dielectric breakdown tests are carried out on 7.2 nm gate oxide capacitors (n-type) in the electric field range 8.3–13.2 MV/cm at high temperatures (160–240 °C). It is proven that even at these high temperatures log( t BD) is proportional to 1/ E OX and the time-to-breakdown mechanism matches the anode hole injection (AHI) model (1/ E OX model). In addition it is presented that the TDDB activation energy E a for this type of gate oxide has linear dependence on stress electric oxide field.