Abstract
Silicon oxy-nitride (SiO x N y ) films prepared by radio-frequency magnetron sputtering were investigated as an anode modifier in organic light-emitting diodes (OLEDs). SiO x N y films were deposited on the indium tin oxide (ITO) anode of an OLED with a configuration of ITO/SiO x N y /α-naphtylphenyliphenyl diamine (NPB)/8-hydroxyquinoline aluminum (AlQ)/Mg:Ag. By varying the argon and oxygen flow ratio during deposition of the SiO x N y films, devices with improved electroluminescent performance and operation lifetime were obtained. Atomic compositions of the SiO x N y films were analyzed with X-ray photoelectron spectroscopy. The best device with the optimized SiO x N y film showed a half brightness lifetime 5 times better than that of the control device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
