Lifetime and diffusion length of electrons in p-GaSe by photovoltaic effect measurements at room temperature

Abstract

The determination of the minority carrier diffusion length, L n, and lifetime, τ n, in p-GaSe has been accomplished by measuring both the short-circuit current, I sc, as a function of the wavelength of the incident light, and the transient photovoltaic effect decay time. The value so obtained for τ n is 18.9 μs (as a mean value), while for L n, the values ranged from 14.4 to 18.8 μm. Since both L n and τ n are obtained by using two different techniques, the determination of the minority carrier mobility is clearly possible.