Abstract
The life characteristics of plastic encapsulated semiconductor devices have been defined. It consists of an initial period of failure-free operation followed by a period of an increasing number of failures. The initial failure-free period is related to the time required for moisture ingress through the encapsulating material and device passivation. The period of increasing failure relates to the rate at which corrosion of device metallization occurs. This paper illustrates how these periods are affected by temperature-humidity stress, biasing and salt atmosphere content and also alludes to other potential influences.
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