Abstract

Epitaxial magnetic tunnel junctions (MTJs) with a Li-substituted spinel MgAl2O4 barrier were prepared by sputtering and plasma oxidation of an Mg/LiAl bilayer. The formed MTJ with Fe(001) electrodes showed a relatively large tunnel magnetoresistance (TMR) ratio of 120% (174%) at room temperature (3 K) and two local minima in the tunneling conductance spectra (parallel magnetization), revealing the occurrence of the coherent tunneling effect through the Li-substituted spinel barrier. The results are likely to pave the way for a variety of quaternary spinel oxide barriers in which structural and transport properties of MTJs can be engineered in the coherent tunneling regime.

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