Li‐Ion Doping as a Strategy to Modulate the Electrical‐Double‐Layer for Improved Memory and Learning Behavior of Synapse Transistor Based on Fully Aqueous‐Solution‐Processed In2O3/AlLiO Film

Abstract

AbstractNeuromorphic computing systems shows great potential for use in artificial intelligence. In this field, the simulation of synaptic behavior by electronic devices is considered as the first step for hardware implementation. However, solid‐state oxide synapse transistors still remain largely unexplored. An environmentally friendly aqueous route is adopted for oxide film fabrication. Li is doped in Al2O3 to promote the formation of electrical double layers (EDLs). An aqueous‐solution‐processed In2O3/AlLiO thin‐film transistor is fabricated and exhibits excellent electrical performance with a μ of 24.53 cm2 V−1 s−1 and a small VTH of 0.63 V. The device shows excellent short‐term memory (STM) and long‐term memory (LTM) characteristic response to electrical stimulus. By modulating the presynaptic pulse, the device exhibits a large change in synaptic weight (the maximum value of Δw is larger than 1000%). Conversion from STM to LTM is successfully stimulated. After repeated stimulation, the excitatory synaptic current (EPSC) can maintain a high‐level state for more than 100 s. Addtionally, high‐pass filtering and dynamic filtering characteristics are achieved and studied. Finally, Pavlov's dog experiments are conducted with this device to emulate the behavior of associative learning.