Abstract
Zinc oxide (ZnO) possesses many interesting properties, such as a wide energy bandgap, large photoconductivity, and high excitonic binding energy. Chemical-vapor-deposition-grown ZnO films generally show n-type conductivity. A compensation doping process is needed to achieve piezoelectric ZnO, which is needed for surface acoustic wave (SAW), bulk acoustic wave, and micro-electromechanical system devices. In this work, a gas-phase diffusion process is developed to achieve piezoelectric (11\(\bar 2\)0) ZnO films. Comparative x-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements confirmed that high crystal quality and good surface morphology were preserved after diffusion. Photoluminescence (PL) measurements show a broad band emission with a peak wavelength at ∼580 nm, which is associated with Li doping. The SAW, including both Rayleigh-wave and Love-wave modes, is achieved along different directions in piezoelectric (11\(\bar 2\)0) ZnO films grown on an r-plane sapphire substrate.
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