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Abstract
Thin films of poly(di-n-hexylsilane) were irradiated with 2–20 MeV H +, He + and He 2+ ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation flux, and the ion beam induced reaction radius; the track radius was determined for the radiation sources by the function of molecular weight dispersion. The values obtained ranged from 5.9 ± 1.5 nm for 2 MeV He + to 1.0 ± 0.5 nm for and 20 MeV H + ion beam irradiation.
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