Abstract
Within the following in the series of the review and tutorial articles next topics are discussed in the frame of the «bottom – up» approach of modern nanoelectronics: elastic and spin dephasing modeling, account for non-coherent processes using Buttiker probe, 1D conductor with two and more scatterers, quantum interference, strong and weak localization, potential drop across scatterers, quantum oscillations in non-equilibrium Green’s functions (NEGF) method without dephasing and with it, destructive and constructive interference effects, four-component description of spin transport with account for dephasing, and pseudo-spin formalism.
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