Abstract
Using a recently developed MBE apparatus, the GaAs ( 1 ̄ 1 ̄ 1 ̄ ) B(2×2) surface was prepared and studied in situ by photoemission and LEED intensity analysis. The measured surface core level shifts of the Ga and As 3d core levels support the atomic geometry of the As-trimer model whose detailed structure was determined by LEED intensity analysis.
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