Abstract
AbstractThe data concerning the light‐emitting diodes based on ZnO homojunction with ITO/n ‐ZnO/p ‐ZnO+photoresist/Au/Ti and ITO/n ‐ZnO/p ‐ZnO+pho‐toresist+PEDOT:PSS/Au/Ti structures are reported. The p ‐ZnO nanowires were grown by electrochemical deposition method. It is suggested that the p ‐type conductivity first of all is connected with the zinc vacancies VZn. The clear rectifying behavior was observed on the current‐voltage curve of the ZnO p ‐n homojunction. The broad electroluminescence (EL) emission bands in the blue, green and red regions lead to observation of the white light by a naked eye under forward bias. The intrinsic defects such as Zni, VZn, Vo and Oi would be responsible for occurrence of these bands. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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