Leaky wave excitation on three‐dimensional via‐fed printed interconnects

Abstract

Leaky wave excitation on three‐dimensional, via‐fed single and coupled microstrip interconnects is studied. Closed‐form asymptotic expressions for the fields associated with the interconnect are derived and are applied in the traveling/standing wave and leaky wave regimes, both of which lead to radiation. The leaky wave beam angle is found to correspond to the usual two‐dimensional ray optics leakage angle for long interconnects, as expected, and depends on interconnect length, spacing, and excitation for shorter interconnects. Comparisons with full‐wave results are shown for the case of via‐fed coupled interconnects.