Abstract
Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.
Highlights
Reverse bias leakage in bulk Gallium Nitride (GaN)-on-GaN pn diodes has been studied as a function of time
A peak was observed in the current transient
to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters
Read more 
Summary
Introduction
Results
Conclusion
Sign-in/Register to view highlights & summary Full Text Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
