Abstract
Silicon wayeguides fabricated on silicon-on-insulator wafers are leaky in nature. This fact puts a lower bound on the insulator thickness in silicon photonic structures as integrated with state-of-the-art electronic devices. We examine this constraint from the angle of finite gain compensation for leakage loss using m-V semiconductor gain media bonded to passive silicon waveguides.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
