Abstract
AbstractFor the leakage current through high‐permittivity, low‐electronic mobility, perovskite‐type thin films a bulk‐limited conduction mechanism is suggested, in contrast to the often assumed interface injection limitation. This model can successfully describe measured leakage data of field, temperature, thickness and electrode dependence in SrTiO3 and Ba0.7Sr0.3TiO3 thin films.
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