Abstract
The origins of leakage currents and passivation effects of GaN-based light emitting diodes fabricated with Ag p-contacts have been investigated by electrical measurements. A significant increase in reverse leakage current is attributed to the surface migration of Ag. A passivation of mesa sidewalls by SiO2 is found to be effective in suppressing the reverse leakage. However, the passivation results in a somewhat increase in the forward leakage at moderate voltages. Such forward leakage is explained in terms of the presence of local deep-level states in p-GaN generated during SiO2 deposition, acting as a parasitic diode with a lower barrier height.
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