Abstract
InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10−9 A/cm2 at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.
Highlights
III-Nitrides, with excellent optic and electronic properties, can be widely used for solar cells, optical wave guides, high-speed electronics, and terahertz emitters [1]
To analyze the influence of Mg doping in InN films, InN and GaN peaks were fitted with a Gauss model to get more accurate peak information
In conclusion, InN-based MIS structures were fabricated with high-quality Al2O3 thin films as dielectrics
Summary
III-Nitrides, with excellent optic and electronic properties, can be widely used for solar cells, optical wave guides, high-speed electronics, and terahertz emitters [1]. InN has the lowest effective mass of electrons and the highest mobility, and it is a promising semiconductor for applications in high-speed electronics such as field-effect transistors (FETs) and high-electron-mobility transistors (HEMTs). One of the major obstacles that limit the performance and reliability of these transistors for high-power radio-frequency (rf ) applications is the high gate leakage [2]. To solve this problem, structures like metal-insulator-semiconductor (MIS) and metal-oxide-semiconductor (MOS) have been developed by using SiO2 and Al2O3 as the dielectric layers [3, 4]. None of MIS or MOS structures has been reported on InN electronic devices yet. The surface electron accumulation is not completely explained and solved, p-type carriers have been confirmed in Mg-doped InN by indirect evidences such as
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