Abstract
A critical review of leakage current values and reliability issues for Ta2O5 thin films as high-k storage insulators in gigascale dynamic random access memories (DRAMs) is presented. The challenges for reaching the leakage current limits allowable for 1–4 Gbit DRAMs are discussed. The implications for the conduction mechanisms in Ta2O5, and their dependence on the parameters of the system Ta2O5/Si, are presented. The results of high-temperature oxygen annealing on the conduction mechanism of r.f.-sputtered Ta2O5 are illustrated. A leakage current density as low as 10−8 A cm−2 at a 1 MV cm−1 applied field has been obtained. It is concluded that the dominant conduction mechanism in the intermediate fields (0.8–1.3 MV cm−1) can be effectively controlled by appropriate technological steps.
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