Leakage Current in Fast Recovery Diode Suppressed by Low Temperature Supercritical Fluid Treatment Process

Abstract

Fast recovery diodes (FRD) are widely used in transformer circuits for fast switching. Generally, in order to reduce forward voltage to achieve fast switching, the doping concentration is increased to reduce on-state resistance (Ron). This, however, will also increase reverse bias leakage as well as recovery time, resulting in a large amount of excess power consumption. In this letter, we use a unique low temperature supercritical fluid treatment process (LTSCF) to reduce this reverse bias leakage current, without affecting the on-state characteristics or switching characteristics. Experimental results show that the device’s average reverse bias leakage was reduced by 65% after LTSCF.