Abstract
Leakage currents across the ultra-shallow junctions formed by plasma doping using B2H6/He plasma were analyzed. With J-V-T and C-V-T measurements, we discussed the leakage current behavior in order to reveal the origin of the leakage current of ultra-shallow junctions formed by the plasma doping. Midgap trap levels of 0.59 eV have been found for these junctions.
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