Abstract
The leakage current of BiFeO3 thin films can be reduced by Sm or Ti doping, and their codoping effect is significant. X-ray photoelectron spectroscopy revealed that the reduction in the leakage current can be ascribed to decreased Fe2+ ions and oxygen vacancies. The leakage mechanisms of pristine and doped BiFeO3 films were studied by analyzing their leakage current characteristics through curve fitting. It was found that Ti could stabilize the trapped carriers, while Sm might decrease the trap energy and contrarily benefit the excitation of the trapped carriers, which explains the greater effect of Ti in reducing the leakage current than that of Sm. The piezoelectric properties of Sm/Ti-codoped BiFe0.9Ti0.1O3 (BFO) films were comparable to those of pristine BFO owing to the enhanced electric breakdown despite their reduced remanent polarization.
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