Abstract
We investigated the influence of passivation structure on reverse leakage current characteristic of vertical GaN-based light emitting diodes (LEDs). Proper passivation structure is important for high-performance vertical LEDs because large external or residual stress arising during device fabrication and operation can deteriorate electrical properties such as leakage current and current-voltage behavior. Unpassivated and SiO 2 -passivated vertical LEDs showed relatively large leakage currents in reverse bias. In contrast, photoresist-passivated vertical LEDs showed a very low leakage current of ∼4 nA for a reverse bias of -5 V, and lower forward operation voltage of 3.22-3.24 V at 20 mA compared to lateral LEDs.
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