Abstract
The leakage behavior of the quasi-superlattice structure has been characterized by current–voltage measurements at room temperature and 50 K. A resonant tunnelinglike leakage characteristic is observed at low temperature. The resonant tunneling occurs at around 2, 5.2, and 7 V under a gate voltage swept from 0 to 10 V. A concise physical model is proposed to characterize the leakage mechanism of tunneling for the quasi-lattice structure and suggests that the considerations of the operating voltage for the two-bit per cell nonvolatile-memory device need to be taken into account.
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