Abstract
Leakage currents at high electric fields in silicon dioxide films are known to be dominated by tunnelling from the conduction band of the silicon into the oxide conduction band. Little work has been reported on conduction at low electric fields and the effects of aging on this low-level mechanism. We report on the results of experiments indicating that low-field conduction in SiO2 may be of a Poole-Frenkel nature (i.e. a hopping mechanism).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.