Abstract
Resistance degradation in lead zirconate titanate (Pb(Zr,Ti)O3, PZT) thin‐film capacitors has been studied as a function of applied voltage, temperature, and film composition. The mean time‐to‐failure (lifetime, or tf) of the capacitors shows a power‐law dependence on voltage of the form tf∝V−n (n similar/congruent 4‐5). The capacitor lifetime also exhibits a temperature dependence of the form tf∝ exp[Ea/(kT)], with an activation energy of 0.6‐1.0 eV. The steady‐state leakage current in these samples seems to be bulk controlled. The voltage V, temperature T, and polarity dependence of the leakage current collectively suggest a leakage‐current mechanism that is most similar to a Frenkel‐Poole process. The tf value and the leakage current of niobium‐doped PZT films are superior to those of undoped PZT films. This result can be explained on the basis of the point‐defect chemistry of the PZT system. Finally, the results indicate that the niobium‐doped PZT films meet essential tf requirements for decoupling‐capacitor applications.
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