Lead-free CsBi3I10 perovskite based photo-enhanced triboelectric nanogenerator

Abstract

Perovskites have become promising candidates for triboelectric nanogenerators (TENGs) because of their excellent electrical and dielectric properties. Also, and the as-fabricated triboelectric-photoelectric coupled TENG based on those semiconductor characteristics can effectively enhance the device output performance. Herein, a low-toxic lead-free bismuth halide perovskite CsBi3I10 (CBI) film was proposed as triboelectric material for the first time, and a photo-enhanced TENG was designed based on CBI owing to its broad absorption properties. The CBI based TENG exhibits the highest voltage of 158 V and current density of 45.5 mA m−2 in dark condition. Furthermore, under illumination, the triboelectric output of voltage and current are increased by about 21.7% and 15.8% respectively, and the power density of the device can reach up to 4.95 W m−2. This work not only initiates a new route for applying lead-free perovskite in TENGs but also presents a hybrid TENG for simultaneously harvesting mechanical and light energy based on the triboelectric-photoelectric coupling effect.