Abstract
Abstract In this paper the organometallic chemical vapor deposition (OMCVD) of RuO2 using the precursor ruthenocene, Ru(C5H5)2, will be discussed. Stoichiometric RuO2 thin films with a specific resistivity of about 50 μΩcm were obtained both on strontium titanate and platinized silicon wafers at temperatures between 300–700°C. PbZr0.8Ti0.2O3 thin films were in situ deposited onto these RuO2 electrodes. The ferroelectric behavior of the films obtained on the RuO2 electrodes is compared with those obtained on platinum electrodes. Attempts to deposit in-situ a RuO2 top electrode on the PbZr0.8Ti0.2O3 were unsuccessful.
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