Abstract
Abstract Pb(ZrxTi1−x)O3 (PZT) based ferroelectric capacitors have been produced at 600°C on R-cut sapphire and Si-doped (100) GaAs substrates using a pulsed laser ablation deposition (PLAD) technique. La0.5Sr0.5CoO3 (LSCO) conducting electrodes deposited using PLAD serve as top and bottom electrodes. X-ray diffraction results show that the PZT film is polycrystalline and phase-pure in both cases. Electrical characterization of the films show remanant polarization in excess of 20 μC/cm2. Results of long term properties show that these capacitors: are very tolerant to extremely large numbers of switching cycles; retain charges over very long periods of time; and do not show a strong tendency for their dipoles to be imprinted in a preferred direction.
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