Abstract
Calculations of threshold current densities for lead-tin telluride double-heterojunction (DH) laser diodes are presented, in which the spatial distribution of the injected minority carriers and the critical level of minority carrier injection necessary for population inversion are considered. Excellent agreement between the predictions of this model and experimental data is obtained, which suggests that credible predictions of high-temperature performance can be made. The need to inject a critical level of minority carriers is shown to be the principal contribution to the threshold current density except at very low temperature and to lead to a rapid increase in threshold with increasing temperature. It is found experimentally that below 40 K the threshold no longer decreases with temperature; two possible explanations for this behavior are suggested.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
