Abstract
Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.
Highlights
Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance
Very recently ion drift was shown to play a dominant role on charge transport properties[33], stimulating an ongoing debate about the carrier character and the origin of anomalous hysteresis, together with the role of polarization, ferroelectric and trap-state filling effects in organolead halide perovskite devices investigated at room temperature[34,35,36,37]
A film roughness of RRMS 1⁄4 10.8 nm was evaluated by atomic force microscopy (AFM; Supplementary Fig. 1)
Summary
Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. We found that reducing the operating temperature of our devices is an effective way to reduce hysteresis effects due to ionic transport/screening, allowing to record transport characteristics typical of conventional ambipolar semiconductor FETs (Fig. 2).
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