Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse

Abstract

Memristive devices such as resistive switching memories and artificial synapses have emerged as promising technologies to overcome the technological challenges associated with the von Neumann bottleneck. Recently, lead halide perovskites have drawn substantial research attention as the candidate material for memristors and artificial synapses due to their unique optoelectronic properties, solution processability, and mechanical flexibility. However, the toxicity of lead‐containing species has raised major concerns for health and the environment, which makes it crucial to transition from lead‐based to lead‐free materials for practical applications. Herein, the recent progress of lead‐free metal halides including perovskites and perovskite analogs for resistive memory and artificial synapse is reviewed. Initially, the fundamentals of lead‐free materials and switching mechanisms are introduced. Next, the material design, fabrication technique, and device performance are summarized and critically evaluated for each metal halide species. Finally, the challenges of the lead‐free metal halides toward memristors and artificial synapses are outlined and discussed, and some potential research directions for future study are proposed.