Abstract
Abstract Photodetectors based on semiconducting materials are vital building blocks for modern systems containing optoelectronic modules. Although commercial semiconductors have established good performances, they are plagued by complex processing procedures and stalled performances. Recently, lead halide perovskites with superior semiconducting attributes have achieved stunning progress in optoelectronics including photodetectors. However, the toxicity of lead and the ill stability significantly handicap their practical use. Great efforts thus have been devoted to developing lead-free alternatives with improved stability and uncompromised traits. In this review, we thoroughly summarize recent progress in photodetectors based on lead-free halide perovskite variants. The substitution of lead with new elements usually induces a change in structure and ensuingly optoelectronic particularities, which afford unique suitability for a collection of functionality-specified photodetectors. Especially, the family of lead-free variants witnesses a range of bandgaps that construct a broadband photon detection spanning from near-infrared (NIR) to visible regimes. Besides, stress is laid on the X-ray detection capability based on especially bismuth-type lead-free perovskites, of which the strong X-ray absorption, large bulk resistance, suppressed ion migration, and efficient charge collection enable superior X-ray sensitivities and ultralow detection limits. Finally, the challenges and visions are discussed.
Highlights
High-performance photodetectors are fundamental components that receive light signals and convert them into analyzable electrical output, nowadays they are playing an indispensable role in numerous optoelectronic applications in both civil and military fields, such as biomedical imaging [1], optical communications [2], nondestructive inspection [3], automation control [4], and so forth
We thoroughly summarize recent progress in photodetectors based on lead-free halide perovskite variants
Xu et al introduced the use of dimension-reduced (BA)2CsAgBiBr7 for X-ray detection, 2D halide perovskites has long been regarded as a more stable alternative for the 3D counterparts [78, 79, 148], the authors reported the favorable attributes of large μτ product, high bulk resistance, and low density of trap states, which collectively contribute to a decent sensitivity of 4.2 (@5 V mm− ) ( (V mm−)1)
Summary
High-performance photodetectors are fundamental components that receive light signals and convert them into analyzable electrical output, nowadays they are playing an indispensable role in numerous optoelectronic applications in both civil and military fields, such as biomedical imaging [1], optical communications [2], nondestructive inspection [3], automation control [4], and so forth. The ever-increasing demand is urging for various functionality-specified photodetectors, e.g., photons of energy spanning from the X-ray range to the nearinfrared range see vastly different attributes, calling for carefully-designed semiconductors that can actively respond to the photons In this regard, the photon energy ranges detectable determined by the semiconductor bandgaps should be carefully inspected when developing a new material family with light sensitivity. Some types of lead-free perovskites were recently even confirmed as efficient X-ray sensitive materials in the form of either indirect scintillators or direct detectors [29,30,31] Those based on bismuth (Bi), the element with the highest Z value among the stable ones, enjoy the merits of high density, large average Z value, efficient charge transport, suppressed ion migration, etc., allowing strong X-ray absorption and efficient charge collection. A vision and challenges of the lead-free perovskite variants-based photodetectors are provided
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