Abstract
In this study, we present structural and dielectric properties of doped and un-doped BaTiO3 (BTO) thin films samples. BTO sample were produced by non-vacuum process specifically sol-gel spin coating technique. The doped samples involve Co, Gd, Mn, Sr, and Zr in the Ba-site of the BTO. We used SEM, XRD and AFM analysis techniques to characterized our samples. We also conduct a dielectric measurement using a Vector Network Analyzer. According to our findings the highest dielectric constants were observed for Sr and Zr doped BaTiO3 thin films which were not applied any heat treatment and were obtained as 9.25 and 9.4 at 5.4 GHz frequency, respectively. On the other hand, the value of dielectric constants of the films that were analyzed after heat treatment were determined as 7.7 and 7.45 at 6.8 GHz on Sr and Zr doped BaTiO3 thin films, respectively.
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