Abstract

Cs2SnI6 is an air-stable and non-toxic perovskite variant photovoltaic material which exhibits p-type conductivity under doped conditions. In this work, we report the synthesis and stability studies of Cs2SnI6 towards its application as a solid-state Hole Transport Material (HTM) in Titania Nanotube (TNT) based Dye Sensitized Solar Cells (DSSCs). Cs2SnI6 crystals were synthesized using precipitation method and its stability was assessed using X-ray diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS) and Thermogravimetric Analysis (TGA). Cs2SnI6 doped with SnI2 was deposited onto the TNT photo-anode as the HTM layer through dip coating. Deposition time was varied to obtain a continuous layer of Cs2SnI6 HTM over TNT photo-anode and cell characteristics were studied. We were able to fabricate air stable, all solid-state solar cells with a Jsc of 6 mA/cm2, Voc of 536 mV and PCE of 1.3%. The study propounds contemporary analysis on Sn based perovskite systems, in the field of DSSCs.

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