Abstract
ABSTRACTWe have investigated the structural, chemical and electrical properties of films with Pb0.6Sr0.4TiO3(PST60) nominal composition grown on well texturized LSCO/SrTiO3(STO) substrates by RF-Sputtering. The crystal structure and electrical properties of the PST60 films are remarkably influenced by the texture characteristics of the LSCO films. The structural and ferroelectric characteristics of PST60 thin films are determined to evaluate the potential of this heterostructure for non-volatile memory applications. Epitaxy of LSCO films was confirmed before depositing PST60 films on the above mentioned substrates through 4-Circle X-Ray Diffraction analysis (θ/2θ, ω and φ scans). The XRD analysis performed on the ferroelectric PST60 layer showed that the films are textured and entirely perovskite phase. LSCO and PST60, crystallize in the perovskite structure and their lattice parameters are well matched. This fact renders favorable structural and chemical conditions for the growth of PST60 on LSCO. The electrical performance of the Pt/PST60/LSCO/SrTiO3(001) capacitors was evaluated through Polarization-Voltage (P-V), Current-Voltage (I-V) and Fatigue measurements.
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