Abstract
A new group of high gain, wide margin direct injection Josephson junction logic gates including a three Josephson junction OR (3J/OR) and a four Josephson junction AND (4J/AND) was previously described. In the present work, these gates have been fabricated in an improved lead alloy technology using 5μm design rules. The measured threshold curves of the 3J/OR and the 4J/AND are in good agreement with the theoretical predictions despite the fact that current density and sheet resistance of the samples differed from the design values.
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