Abstract
A standard 0.35 micrometer CMOS technology has been extended for 100 V Power IC applications by accommodating reduced surface field (RESURF) LDMOSFET device with p-well block region or extended poly-overlap region for suppression of the drain wrapping potential. A 100 V integrated H-bridge circuit suitable for driving a brushless DC motor has been designed, manufactured and tested to prove the technology. To streamline the design and integration of this power device 2D and 3D simulations have been performed. Different electrical isolation schemes to provide technology compartmentalization have also been investigated experimentally and results are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
