Abstract
In order to maximize the efficiency of telecommunications equipment, it is necessary that the radio frequency (RF) power amplifier is situated as closely as possible to its compression point. This makes its response nonlinear, and therefore it is necessary to linearize it, in order to minimize the interference that nonlinearities cause outside the useful band (adjacent channel). The system used for this linearization occupies a high percentage of the hardware and software resources of the telecommunication equipment, so it is interesting to minimize its complexity in order to make it as simple as possible. This paper analyzes the differences between the laterally diffused MOSFET (LDMOS) and gallium nitride (GaN) power amplifiers, in terms of their nonlinearity graphs, and in terms of the greater or lesser difficulty of linearization. A correct choice of power amplifier will allow for minimization of the linearization system, greatly simplifying the complexity of the final design.
Highlights
Complexity toto its compression p s makes its response nonlinear, and it is necessary to linearize it, in order to mini
The aim of this work is to show how to simplify the design of the linearization system by means of the correct choice of power amplifier
Since the device must be as efficient as possible, the PA is configured to work near the P1dB of the amplifier, and it will be necessary to apply a linearization technique in order to minimize the nonlinear distortion
Summary
Complexity toto its compression p s makes its response nonlinear, and it is necessary to linearize it, in order to mini. Spain analyzes the differences between the laterally diffused MO (GaN) power amplifiers, in terms of their nonlinearity graphs, a ms of the greater lesser difficulty ofOctober linearization. In order to maximize the efficiency of telecommunications equipment, it is necessary that the radio frequency (RF) power amplifier is situated as closely as possible to its compression point This makes its response nonlinear, and it is necessary to linearize it, in order to minimize the interference that nonlinearities cause outside the useful band (adjacent channel). This paper analyzes the differences between the laterally diffused MOSFET (LDMOS) and gallium nitride (GaN) power amplifiers, in terms of their nonlinearity graphs, and in troduction terms of the greater or lesser difficulty of linearization. A correct choice of power amplifier will allow for minimization of the linearization system, greatly simplifying the complexity of the final design
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