Abstract
An LDMOS RF power amplifier with improved performance characteristics such as intermodulation distortion (IMD) and power-added efficiency (PAE) using a defected ground structure (DGS) matching circuit and bias lines is presented. The injection of the fundamental-signal 2nd harmonics in the amplifier together with the two fundamental signals will produce additional IM products at the output. By proper selection of phase and amplitude of the injected second harmonic signals, it is possible to improve the IMD performance. The resultant PAE of power amplifier with DGS matching circuit and bias lines is improved by up to 6%. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 50–53, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21257
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