Abstract
In this paper, a novel carbon nanotube field effect transistor with linear doping profile channel (LDC–CNTFET) is presented. The channel impurity concentration of the proposed structure is at maximum level at source side and linearly decreases toward zero at drain side. The simulation results show that the leakage current, on-off current ratio, subthreshold swing, drain induced barrier lowering, and voltage gain of the proposed structure improve in comparison with conventional CNTFET. Also, due to spreading the impurity throughout the channel region, the proposed structure has superior performance compared with a single halo CNTFET structure with equal saturation current. Design considerations show that the proposed structure enhances the device performance all over a wide range of channel lengths.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
