Abstract

Laser beam induced current (LBIC)/nondestructive technique that has been used for a number of years to qualitatively examine large arrays of p-n junctions, especially in HgCdTe infrared focal plane arrays. In this paper, we quantitatively study the application of the LBIC imaging technique to semiconductor arrays Based on a previous mathematical model for LBIC applied to individual devices, we employ the homogenization method to derive approximations of the LBIC images of large arrays. Such approximations reduce the computational burden in simulations of these LBIC bouges. We then illustrate the application of our approximations for the purpose of recovering array parameters from the LBIC images.

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