Abstract
Abstract In order to conduction-band engineer quantum cascade lasers (QCLs) for emission wavelength, specifically QCLs emitting at 4.6 µm, precise control over layer thicknesses and compositions is required. In this study, Al/Ga incorporation in a strain-balanced InAlAs/InGaAs superlattice (SL) on InP is characterized as a function of layer thickness, keeping the composition constant, using high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) and Atom Probe Tomography (APT). A SL structure was grown on an InP substrate by organometallic vapor phase epitaxy (OMVPE) at a temperature of 605 °C and a reactor pressure of 100 torr, with 5 sec interruption time between layers. The full growth thickness obtained from STEM images was used to calibrate the reconstruction of the atom probe data. From the APT results it was found that the Al and Ga incorporation in thin layers (
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