Abstract
Hexagonal boron nitride (h-BN) has recently become a promising and popular material due to its wide applications, such as deep ultraviolet optoelectronic devices, novel nonvolatile memory technology, room temperature quantum emitter, and dielectric in devices based on two-dimensional (2D) materials. However, realizing uniform h-BN thin films thicker than monolayer remains a major challenge, which is important in both fundamental and practical studies. In this work, we report the selective growth of large-area bilayer h-BN using a two-step chemical vapor deposition (CVD) approach. Through constructing a confined space in the Cu foils/sapphire stack, controlled synthesis of bilayer h-BN is achieved. Systematic characterization verified the formation of bilayer h-BN and the mechanism of CVD growth is also studied. We find that the in situ annealing between the two steps could efficiently facilitate the selective growth, and the local oxidation and reduction process could create preferred nucleation sites for uniform bilayer h-BN. Our results could enrich the understanding of the synthesis mechanism and lay the foundation for controllable synthesis of high-quality h-BN.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.