Layered Structure Based on PANi and SiO2 to Absorb HPM to Protect Systems and Devices

Abstract

A layered structure composed of polyaniline (PANI) and silicon dioxide (SiO2) is proposed in this article. It was developed to obtain ultra-wideband and high-power microwave absorption. Due to the high thermal stability of PANi and SiO2 above 400 °C, the proposed structure is able to absorb high amounts of power. The electromagnetic behavior of the structure is examined by full-wave simulation to investigate its ability to absorb microwave frequencies ranging from 1 to 20 GHz under both normal and oblique incidences of electromagnetic waves. Recent studies have produced results with a limited absorption range and a less consistent angular incidence than the structure presently being examined. Also, the layer-by-layer deposition of thin film facilitates the manufacturing procedure. Furthermore, owing to the high thermal stability of the proposed structure, the absorption of high-power microwaves is superior to that of alternative methodologies.