Layered Structure Analysis of Multilayers by Use of X-Ray Reflectometry and X-Ray Fluorescence Analysis

Abstract

A technique of layered structure analysis using X-ray reflectometry and X-ray fluorescence analysis was investigated for multi-layered thin films. Standard samples consisting of a simple layered structure Si/Ta (50)/X (x)/Ta (100A) (X = Cu, NiFe, CoFe, PdPtMn, x=10-300A) were fabricated to calibrate the elemental sensitivity coefficients of X-ray fluorescence measurement. The stuctural parameters of the standard samples, such as the thicknesses, densities, and interface widths of each laser, were determined by X-ray reflectometry. Using the evaluated values of thicknesses and densities for the standard samples, elemental sensitivity coefficients whose accuracy was within 5% were calibrated at a suitable level for thin films. We found that the thickness of each layer of a spin-valve film can be evaluated within an accuracy of 5% by X-ray fluorescence measurement, and the thicknesses obtained by X-ray fluorescence measurement agreed well with those given by cross-sectional TEM and X-ray reflectometry.