Layered carbon nitride films deposited under an oxygen-containing atmosphere and their electronic properties

Abstract

Layered carbon nitride (g-C3N4) is a novel semiconducting and functional material for optoelectronic applications. The physical and chemical properties of g-C3N4 films differ depending on the preparation atmosphere. Herein, we deposited g-C3N4 films under a mixed oxygen (O2)-nitrogen (N2) gas atmosphere and studied their effects on the carrier transport properties. Although no significant change in the film orientation was observed, the deposition rate decreased as the O2 gas ratio in the mixed N2/O2 atmosphere increased. Despite their thinness, the luminescence intensity of g-C3N4 films deposited under an O2-containing atmosphere increased by 3.5–5.0 times compared to that deposited under an N2 atmosphere. With respect to voltage application, carrier transport owing to the thermionic emission and/or direct tunneling initially followed ohmic conduction, followed by insufficient trap-filled conduction. As the applied voltage increased further, fully trap-filled conduction was confirmed owing to Fowler–Nordheim tunneling. Moreover, the conductivity type could be changed to p-type and n-type using N2 gas and mixed N2/O2 gas atmospheres, respectively, during film deposition. In addition to the intrinsic transport properties, the intentionally formed Schottky barrier also affected the carrier transport; therefore, the diode-like rectifying behavior of the current density was achieved.