Abstract
Layer transfer and simultaneous crystallization of amorphous Si (a-Si) films induced by near-infrared semiconductor-diode-laser (SDL) irradiation have been investigated. The a-Si films supported by columns on a starting substrate (quartz) and a counter substrate (glass and polyethylene terephthalate) were face-to-face contact, and an SDL irradiated the a-Si films. After SDL irradiation, the Si films of 6 × 6 mm2 area were completely transferred and crystallized simultaneously on the counter substrates. In-situ monitoring revealed that the layer transfer took place either in the solid phase or the liquid phase followed by phase transformation in the cooling period.
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