Abstract
Molecular beam epitaxy of Fe 3Si films on GaAs (001) is studied in situ by grazing incidence X-ray diffraction. Fe 3Si grows layer-by-layer. During deposition the growth front roughens as indicated by the damping of the X-ray oscillations and corresponding atomic force micrographs. The X-ray oscillations are modified during growth at substrate temperatures of 180 °C and below.
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